Physical Review Applied - September 2023

Physical Review Applied View Email Online   Volume 20, Issue 3 September 2023   View Issue   Advertisement Physical Review B​ is looking for a new part-time (remote) Associate Editor PRB seeks an Associate Editor to manage the peer review process of assigned manuscripts by determining whether to send a manuscript out for external review, choosing appropriate reviewers, and making decisions on rejection or acceptance. More information.     Advertisement Make your manuscript publication-ready with Author Services from APS! Do you need language assistance for your next submission? Take advantage of new translation, figure assistance, and text editing services provided by APS and Editage. Experience exceptional support, expertise, and dedication for all your publishing needs. Get a quote.     Advertisement Submit Your Abstract for APS March Meeting 2024 The abstract submission deadline is quickly approaching! Don't miss this opportunity to showcase your work to a global audience of physicists, scientists, and students representing 32 APS Units and Committees and explore groundbreaking research from industry, academia, and major labs. Submit your abstract by October 20.     Not an APS member? Join today to start connecting with a community of more than 50,000 physicists.   EDITORIALS AND ANNOUNCEMENTS To Review Is to Be Randall D. Kamien Phys. Rev. Applied 20, 030001 (2023) – Published 25 September 2023   HIGHLIGHTED ARTICLES Editors' Suggestion Heat Flow through Nonideal Contacts in Hot-Carrier Solar Cells Abhinav S. Sharma, Muhammad Hanif, Stephen P. Bremner, Michael P. Nielsen, Murad J. Y. Tayebjee, Fiacre E. Rougieux, Nicholas J. Ekins-Daukes, and Andreas Pusch Phys. Rev. Applied 20, 034001 (2023) – Published 1 September 2023 Hot-carrier solar cells (HCSCs) are one option for achieving solar-energy conversion more efficiently than conventional single-junction cells. Due to challenging material requirements, the development of HCSCs has been limited to proof-of-concept devices. By examining heat flow in HCSCs, this study suggests expanding their characterization to include the study of carrier temperatures for various contact configurations and biases. The authors show that hotter is not always better: High carrier temperatures may be a sign of excessively high barriers to extraction—an insight that could adjust expectations and interpretations of hot-carrier temperatures in devices.     Editors' Suggestion Ultrashort Electron Wave Packets via Frequency-Comb Synthesis Matteo Aluffi, Thomas Vasselon, Seddik Ouacel, Hermann Edlbauer, Clément Geffroy, Preden Roulleau, D. Christian Glattli, Giorgos Georgiou, and Christopher Bäuerle Phys. Rev. Applied 20, 034005 (2023) – Published 5 September 2023 Single-electron sources are vital for modern nanoelectronics, enabling advances in the emerging field of electron quantum optics. However, their performance is limited by the current method for generating single electrons by applying Lorentzian voltage pulses on the Fermi sea of a quantum conductor. The authors introduce a Fourier synthesis-based voltage pulse generator, allowing the generation and in-situ characterization of a 27-ps electron wave packet in an electronic Mach-Zehnder interferometer. This advancement can potentially enable the study of ultrafast dynamics in quantum nanoelectronic systems and the generation of high-frequency flying-electron qubits.     Editors' Suggestion Damping in Free Layers of Spin-Transfer-Torque Magnetic Memory at Elevated Temperatures Adam Whitney, Chuanpu Liu, Tiffany S. Santos, Rajesh V. Chopdekar, Matthew Carey, Galen Street, Vijaysankar Kalappattil, Keira Leistikow, and Mingzhong Wu Phys. Rev. Applied 20, 034006 (2023) – Published 6 September 2023 The efficiency of spin-transfer-torque magnetic random-access memory (MRAM) critically depends on the damping of the free layer. As MRAM cells operate above room temperature, it is crucial to determine the damping parameter of the free layer at elevated temperatures. This study uses ferromagnetic resonance techniques to measure the damping of MRAM free layers up to 520 K. The data show significant differences in temperature dependence between conventional and low-damping free-layer designs, paving the way for MRAM cells with lower switching current. These insights could impact the development of more efficient and thermally stable MRAM technologies.     Editors' Suggestion Acoustically Induced Spin Resonances of Silicon-Vacancy Centers in 4H-SiC T. Vasselon, A. Hernández-Mínguez, M. Hollenbach, G.V. Astakhov, and P.V. Santos Phys. Rev. Applied 20, 034017 (2023) – Published 11 September 2023 Silicon vacancies in 4H-SiC are color centers with promising applications in quantum technologies, but spin control of the centers generated in a hexagonal local crystallographic environment has yet to be demonstrated above cryogenic temperatures. The authors use the dynamic strain of surface acoustic waves to overcome this limitation and efficiently excite spin transitions in the excited states of these color centers up to room temperature. The acoustic spin control of silicon vacancies opens possibilities for the implementation of efficient quantum spin control and sensing protocols using spin optomechanics.     Editors' Suggestion Long-Lived Singlet State in an Oriented Phase and its Survival across the Phase Transition Into an Isotropic Phase Vishal Varma and T.S. Mahesh Phys. Rev. Applied 20, 034030 (2023) – Published 14 September 2023 Long-lived states (LLSs) in nuclear magnetic resonance have diverse applications, from medical imaging to chemical analysis to quantum information processing, but were hitherto observed primarily in isotropic phases. The authors prepare LLS in an anisotropic environment of a liquid crystal and observe its survival across the phase transition to the isotropic phase. This study could pave the way for trapping LLS in the symmetric spin pair of an isotropic phase after breaking symmetry in an anisotropic phase, and motivate the realization of LLS in the solid phase, which will have implications for solid-state qubits toward achieving longer lifetimes in addition to long-range interactions.     Editors' Suggestion Semiconductor-Quantum-Dot Modulator for Cryogenic Operation of Quantum Circuitry M. R. Hogg, M.G. House, P. Pakkiam, and M.Y. Simmons Phys. Rev. Applied 20, 034066 (2023) – Published 27 September 2023 Quantum computing devices have the potential to solve problems that are beyond even the most powerful modern supercomputers. Most quantum hardware operates at temperatures near absolute zero, but controlling a quantum computer at cryogenic temperatures using signals propagating from room temperature becomes infeasible for large-scale processors. The authors explore a device that allows control signals to be generated on-chip at cryogenic temperatures, potentially mitigating this cryogenic bottleneck. Their device is fabricated in silicon using established technologies for quantum processors, providing a pathway towards a hybrid quantum-classical integrated circuit.     Editors' Suggestion Tuning Arrays with Rays: Physics-Informed Tuning of Quantum Dot Charge States Joshua Ziegler, Florian Luthi, Mick Ramsey, Felix Borjans, Guoji Zheng, and Justyna P. Zwolak Phys. Rev. Applied 20, 034067 (2023) – Published 28 September 2023 Many methods to automatically tune silicon spin qubits are limited by reliability and data efficiency, which makes them less likely to be scalable. The authors demonstrate a reliable, efficient, physics-informed tuning algorithm (PIT) for navigating to a target charge configuration⏤a prerequisite to forming qubits. This tuning method combines machine learning and physical intuition with an algorithm that leverages one-dimensional scans (rays) and conventional peak-finding to navigate from a coarse, unknown device state to a desired charge occupation efficiently and effectively. PIT enables the transformation of an uncalibrated circuit to a functioning quantum processor.     LETTERS Letter Highly Sensitive Temperature Sensing Using the Silicon Vacancy in Silicon Carbide by Simultaneously Resonated Optically Detected Magnetic Resonance Yuichi Yamazaki, Yuta Masuyama, Kazutoshi Kojima, and Takeshi Ohshima Phys. Rev. Applied 20, L031001 (2023) – Published 5 September 2023 Quantum sensors based on silicon vacancies (VSi) in SiC are crucial for precise device design and simulations, but their practical application is hampered by the low sensitivity of temperature. This study introduces a temperature measurement protocol that increases signal intensity by an order of magnitude. By diverting part of the ground state optically detected magnetic resonance signal for temperature measurement, and leveraging simultaneous resonance of the ground state and excited state, the protocol significantly boosts performance. This leap in measurement sensitivity could make VSi-based quantum sensors far more effective and versatile.     ARTICLES Editors' Suggestion Heat Flow through Nonideal Contacts in Hot-Carrier Solar Cells Abhinav S. Sharma, Muhammad Hanif, Stephen P. Bremner, Michael P. Nielsen, Murad J. Y. Tayebjee, Fiacre E. Rougieux, Nicholas J. Ekins-Daukes, and Andreas Pusch Phys. Rev. Applied 20, 034001 (2023) – Published 1 September 2023 Hot-carrier solar cells (HCSCs) are one option for achieving solar-energy conversion more efficiently than conventional single-junction cells. Due to challenging material requirements, the development of HCSCs has been limited to proof-of-concept devices. By examining heat flow in HCSCs, this study suggests expanding their characterization to include the study of carrier temperatures for various contact configurations and biases. The authors show that hotter is not always better: High carrier temperatures may be a sign of excessively high barriers to extraction—an insight that could adjust expectations and interpretations of hot-carrier temperatures in devices.     Sub-5-nm Monolayer Boron Pnictide MOSFETs for n- and p-Type High-Performance Applications Hong Li, Yuhang Liu, Fengbin Liu, and Jing Lu Phys. Rev. Applied 20, 034002 (2023) – Published 1 September 2023   Magnetomechanical Accelerometer Based on Magnetic Tunnel Junctions Andrea Meo, Francesca Garescì, Victor Lopez-Dominguez, Davi Rodrigues, Eleonora Raimondo, Vito Puliafito, Pedram Khalili Amiri, Mario Carpentieri, and Giovanni Finocchio Phys. Rev. Applied 20, 034003 (2023) – Published 5 September 2023   High-Quality-Factor Superconducting Cavities in Tesla-Scale Magnetic Fields for Dark-Matter Searches S. Posen, M. Checchin, O.S. Melnychuk, T. Ring, I. Gonin, and T. Khabiboulline Phys. Rev. Applied 20, 034004 (2023) – Published 5 September 2023   Editors' Suggestion Ultrashort Electron Wave Packets via Frequency-Comb Synthesis Matteo Aluffi, Thomas Vasselon, Seddik Ouacel, Hermann Edlbauer, Clément Geffroy, Preden Roulleau, D. Christian Glattli, Giorgos Georgiou, and Christopher Bäuerle Phys. Rev. Applied 20, 034005 (2023) – Published 5 September 2023 Single-electron sources are vital for modern nanoelectronics, enabling advances in the emerging field of electron quantum optics. However, their performance is limited by the current method for generating single electrons by applying Lorentzian voltage pulses on the Fermi sea of a quantum conductor. The authors introduce a Fourier synthesis-based voltage pulse generator, allowing the generation and in-situ characterization of a 27-ps electron wave packet in an electronic Mach-Zehnder interferometer. This advancement can potentially enable the study of ultrafast dynamics in quantum nanoelectronic systems and the generation of high-frequency flying-electron qubits.     Editors' Suggestion Damping in Free Layers of Spin-Transfer-Torque Magnetic Memory at Elevated Temperatures Adam Whitney, Chuanpu Liu, Tiffany S. Santos, Rajesh V. Chopdekar, Matthew Carey, Galen Street, Vijaysankar Kalappattil, Keira Leistikow, and Mingzhong Wu Phys. Rev. Applied 20, 034006 (2023) – Published 6 September 2023 The efficiency of spin-transfer-torque magnetic random-access memory (MRAM) critically depends on the damping of the free layer. As MRAM cells operate above room temperature, it is crucial to determine the damping parameter of the free layer at elevated temperatures. This study uses ferromagnetic resonance techniques to measure the damping of MRAM free layers up to 520 K. The data show significant differences in temperature dependence between conventional and low-damping free-layer designs, paving the way for MRAM cells with lower switching current. These insights could impact the development of more efficient and thermally stable MRAM technologies.     Multitone Microwave Frequency Locking to a Noisy Cavity via Real-Time Feedback J.P. van Soest, C.A. Potts, S. Peiter, A. Sanz Mora, and G.A. Steele Phys. Rev. Applied 20, 034007 (2023) – Published 6 September 2023   Periodic-Phase Acoustic Vortices with Tunable Comblike Orbital Angular Momentum Spectrum Xin-Rui Li, Jia-Jia Feng, Bu-Chen Ping, Yang Sun, Da-Jian Wu, and Badreddine Assouar Phys. Rev. Applied 20, 034008 (2023) – Published 6 September 2023   Frequency-Multiplexed Transmitted-Wave Manipulation with Multifunctional Acoustic Metasurfaces Haoyi Cheng, Jingwen Guo, Xin Zhang, and Wenjing Ye Phys. Rev. Applied 20, 034009 (2023) – Published 6 September 2023   Large Tunneling Electroresistance, Tunneling Magnetoresistance, and Regulatable Negative Differential Conductance in a van der Waals Antiferroelectric Multiferroic Tunnel Junction Yu Zhu, Boyuan Chi, Leina Jiang, Xiaoyan Guo, Yu Yan, and Xiufeng Han Phys. Rev. Applied 20, 034010 (2023) – Published 7 September 2023   Near-Room-Temperature Single-Photon Emission from a Strongly Confined Piezoelectric InAs Quantum Dot N. G. Chatzarakis, S. Germanis, I. Thyris, C. Katsidis, A. Stavrinidis, G. Konstantinidis, Z. Hatzopoulos, and N. T. Pelekanos Phys. Rev. Applied 20, 034011 (2023) – Published 7 September 2023   Formation of a Dirac Cone and Dynamic Control of its Half-Metallic Properties Using Double-Layer Ring Dipole Arrays Go Itami and Osamu Sakai Phys. Rev. Applied 20, 034012 (2023) – Published 7 September 2023   Asymmetric Heat Transfer with Linear Conductive Metamaterials Yishu Su, Ying Li, Minghong Qi, Sebastien Guenneau, Huagen Li, and Jian Xiong Phys. Rev. Applied 20, 034013 (2023) – Published 7 September 2023   Large and Optimized Thermal Chiral Anomaly in Weyl Semimetal Bi-Sb Joon Sang Kang, Dung Vu, Minyue Zhu, and Joseph P. Heremans Phys. Rev. Applied 20, 034014 (2023) – Published 8 September 2023   Effect of Depolarizing and Quenching Collisions on the Contrast of Coherent Population Trapping Resonance K.M. Sabakar, M.I. Vaskovskaya, D.S. Chuchelov, E.A. Tsygankov, V.V. Vassiliev, S.A. Zibrov, and V.L. Velichansky Phys. Rev. Applied 20, 034015 (2023) – Published 8 September 2023   Characterization of Loss Mechanisms in a Fluxonium Qubit Hantao Sun, Feng Wu, Hsiang-Sheng Ku, Xizheng Ma, Jin Qin, Zhijun Song, Tenghui Wang, Gengyan Zhang, Jingwei Zhou, Yaoyun Shi, Hui-Hai Zhao, and Chunqing Deng Phys. Rev. Applied 20, 034016 (2023) – Published 8 September 2023   Editors' Suggestion Acoustically Induced Spin Resonances of Silicon-Vacancy Centers in 4H-SiC T. Vasselon, A. Hernández-Mínguez, M. Hollenbach, G.V. Astakhov, and P.V. Santos Phys. Rev. Applied 20, 034017 (2023) – Published 11 September 2023 Silicon vacancies in 4H-SiC are color centers with promising applications in quantum technologies, but spin control of the centers generated in a hexagonal local crystallographic environment has yet to be demonstrated above cryogenic temperatures. The authors use the dynamic strain of surface acoustic waves to overcome this limitation and efficiently excite spin transitions in the excited states of these color centers up to room temperature. The acoustic spin control of silicon vacancies opens possibilities for the implementation of efficient quantum spin control and sensing protocols using spin optomechanics.     Method for In-Solution, High-Throughput T1 Relaxometry Using Fluorescent Nanodiamonds Erin S. Grant, Mina Barzegar Amiri Olia, Yang Li, Ella P. Walsh, Gawain McColl, Liam T. Hall, and David A. Simpson Phys. Rev. Applied 20, 034018 (2023) – Published 11 September 2023   Quantum Control of Rydberg Atoms for Mesoscopic Quantum State and Circuit Preparation Valerio Crescimanna, Jacob Taylor, Aaron Z. Goldberg, and Khabat Heshami Phys. Rev. Applied 20, 034019 (2023) – Published 11 September 2023   Laser-Generated Ultrasonic Vortex in the Megahertz Frequency Range Hui Zhou, Ze-Ru Yang, Qiu-Yu Li, Chao Zeng, Si-Yu Liu, Zhong-Hua Shen, and Wei-Wei Kan Phys. Rev. Applied 20, 034020 (2023) – Published 11 September 2023   Brainlike Networks of Nanowires and Nanoparticles: A Change of Perspective Ryan. K. Daniels, Matthew D. Arnold, Zachary E. Heywood, Joshua B. Mallinson, Philip J. Bones, and Simon A. Brown Phys. Rev. Applied 20, 034021 (2023) – Published 12 September 2023   Highly Efficient Coherent Energy Transfer in Molecules near a MoS2 Nanodisk Natalia Domenikou, Ioannis Thanopulos, Vasilios Karanikolas, and Emmanuel Paspalakis Phys. Rev. Applied 20, 034022 (2023) – Published 12 September 2023   Electric Field Control of Chiral Magnonic Resonators for Spin-Wave Manipulation Yat-Yin Au and Kevin G. Fripp Phys. Rev. Applied 20, 034023 (2023) – Published 12 September 2023   Dielectric Relaxation Mechanism in the Phase-Transition Region of a Chiral Hybrid Perovskite and Its Piezoelectric-Energy-Harvesting Properties Aditi Sahoo, Tufan Paul, Pulak Pal, Nisha Hiralal Makani, Aswini Ghosh, and Rupak Banerjee Phys. Rev. Applied 20, 034024 (2023) – Published 12 September 2023   Frost Damage in Unsaturated Porous Media Romane Le Dizès Castell, Rosa Sinaasappel, Clémence Fontaine, Scott H. Smith, Paul Kolpakov, Daniel Bonn, and Noushine Shahidzadeh Phys. Rev. Applied 20, 034025 (2023) – Published 13 September 2023   Laser Wakefield Electron Acceleration with Polarization-Dependent Ionization Injection Mohammad Rezaei-Pandari, Mohammad Mirzaie, Calin Ioan Hojbota, Tae Gyu Pak, Sang Beom Kim, Geon Woo Lee, Reza Massudi, Ali Reza Niknam, Seong Ku Lee, Ki-Yong Kim, and Chang Hee Nam Phys. Rev. Applied 20, 034026 (2023) – Published 13 September 2023   Intermodulation Distortion in a Josephson Traveling-Wave Parametric Amplifier Ants Remm, Sebastian Krinner, Nathan Lacroix, Christoph Hellings, François Swiadek, Graham J. Norris, Christopher Eichler, and Andreas Wallraff Phys. Rev. Applied 20, 034027 (2023) – Published 13 September 2023   Fractional Topological Numbers at Photonic Edges and Corners Cheng-Peng Liang, Yang Liu, Fei-Fei Li, Shu-Wai Leung, Yin Poo, and Jian-Hua Jiang Phys. Rev. Applied 20, 034028 (2023) – Published 13 September 2023   Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co2FeSi/BaTiO3 Multiferroic Interface Shaojie Hu, Shinya Yamada, Po-Chun Chang, Wen-Chin Lin, Kohei Hamaya, and Takashi Kimura Phys. Rev. Applied 20, 034029 (2023) – Published 14 September 2023   Editors' Suggestion Long-Lived Singlet State in an Oriented Phase and its Survival across the Phase Transition Into an Isotropic Phase Vishal Varma and T.S. Mahesh Phys. Rev. Applied 20, 034030 (2023) – Published 14 September 2023 Long-lived states (LLSs) in nuclear magnetic resonance have diverse applications, from medical imaging to chemical analysis to quantum information processing, but were hitherto observed primarily in isotropic phases. The authors prepare LLS in an anisotropic environment of a liquid crystal and observe its survival across the phase transition to the isotropic phase. This study could pave the way for trapping LLS in the symmetric spin pair of an isotropic phase after breaking symmetry in an anisotropic phase, and motivate the realization of LLS in the solid phase, which will have implications for solid-state qubits toward achieving longer lifetimes in addition to long-range interactions.     Quantum State Tomography for Kerr Parametric Oscillators Y. Suzuki, S. Kawabata, T. Yamamoto, and S. Masuda Phys. Rev. Applied 20, 034031 (2023) – Published 14 September 2023   Complementary Two-Dimensional Vertical Transistors through Lamination with a van der Waals Metal Likuan Ma, Quanyang Tao, Yang Chen, Songlong Liu, Zheyi Lu, Liting Liu, Zhiwei Li, Donglin Lu, Yiliu Wang, Lei Liao, and Yuan Liu Phys. Rev. Applied 20, 034032 (2023) – Published 14 September 2023   Tuning Critical Field, Critical Current, and Diode Effect of Narrow Thin-Film Superconductors Through Engineering Inhomogeneous Pearl Length Takayuki Kubo Phys. Rev. Applied 20, 034033 (2023) – Published 15 September 2023   Topological Magnetoelectric Response in Passive Magnetic Devices Antonio A. Valido and Alejandro J. Castro Phys. Rev. Applied 20, 034034 (2023) – Published 15 September 2023   Large Switchable Circular Photogalvanic Effect in the Narrow-Band-Gap InSe/In2Se3 Ferroelectric Heterojunction Guoli Lin, Yiqun Xie, Li Shu, and Xiang Ye Phys. Rev. Applied 20, 034035 (2023) – Published 15 September 2023   Collateral Coupling between Superconducting Resonators: Fast High-Fidelity Generation of Qudit-Qudit Entanglement Pedro Rosario, Alan C. Santos, C.J. Villas-Boas, and R. Bachelard Phys. Rev. Applied 20, 034036 (2023) – Published 15 September 2023   Broadband Spintronic Detection of the Absolute Field Strength of Terahertz Electromagnetic Pulses A.L. Chekhov, Y. Behovits, U. Martens, B.R. Serrano, M. Wolf, T.S. Seifert, M. Münzenberg, and T. Kampfrath Phys. Rev. Applied 20, 034037 (2023) – Published 18 September 2023   Effect of Measurement Backaction on Quantum Clock Precision Studied with a Superconducting Circuit Xin He, Prasanna Pakkiam, Adil A. Gangat, Michael J. Kewming, Gerard J. Milburn, and Arkady Fedorov Phys. Rev. Applied 20, 034038 (2023) – Published 18 September 2023   Multiqubit State Tomography with Only a Few Pauli Measurements Xudan Chai, Teng Ma, Qihao Guo, Zhangqi Yin, Hao Wu, and Qing Zhao Phys. Rev. Applied 20, 034039 (2023) – Published 18 September 2023   Long-Lived Excitations in Wide (In,Ga)N/GaN Quantum Wells Artem Bercha, Grzegorz Muziol, Mikolaj Chlipala, and Witold Trzeciakowski Phys. Rev. Applied 20, 034040 (2023) – Published 19 September 2023   Noise-Aided Invertible Logic from Coupled Nonlinear Systems K. Murali, Manaoj Aravind, and Sudeshna Sinha Phys. Rev. Applied 20, 034041 (2023) – Published 19 September 2023   Stimulated Laser Cooling in a Compact Geometry Using Microfabricated Atomic Beam Collimators Chao Li, Xiao Chai, Linzhao Zhuo, Bochao Wei, Ardalan Lotfi, Farrokh Ayazi, and Chandra Raman Phys. Rev. Applied 20, 034042 (2023) – Published 19 September 2023   Entangling a Magnon and an Atomic Ensemble Mediated by an Optical Cavity Yue Wu, Jun-Hao Liu, Ya-Fei Yu, Zhi-Ming Zhang, and Jin-Dong Wang Phys. Rev. Applied 20, 034043 (2023) – Published 19 September 2023   Hardware-Efficient Entangled Measurements for Variational Quantum Algorithms Francisco Escudero, David Fernández-Fernández, Gabriel Jaumà, Guillermo F. Peñas, and Luciano Pereira Phys. Rev. Applied 20, 034044 (2023) – Published 20 September 2023   Self-Induced Ultrafast Electron-Hole-Plasma Temperature Oscillations in Nanowire Lasers Andreas Thurn, Jochen Bissinger, Stefan Meinecke, Paul Schmiedeke, Sang Soon Oh, Weng W. Chow, Kathy Lüdge, Gregor Koblmüller, and Jonathan J. Finley Phys. Rev. Applied 20, 034045 (2023) – Published 20 September 2023   Time-Resolved In Situ Imaging of Strain Localization in Draupne Shale under Triaxial Compression Aldritt Scaria Madathiparambil, Kim Robert Tekseth, Fredrik K. Mürer, Benoît Cordonnier, Nicolaine Agofack, Jessica McBeck, Pierre Cerasi, François Renard, Basab Chattopadhyay, and Dag W. Breiby Phys. Rev. Applied 20, 034046 (2023) – Published 20 September 2023   Laser Cooling of Traveling-Wave Phonons in an Optical Fiber Joel N. Johnson, Danielle R. Haverkamp, Yi-Hsin Ou, Khanh Kieu, Nils T. Otterstrom, Peter T. Rakich, and Ryan O. Behunin Phys. Rev. Applied 20, 034047 (2023) – Published 20 September 2023   Deep-Learning-Assisted Resonant Ultrasound Spectroscopy for Cubic Solids Hiroki Fukuda, Akira Nagakubo, Oliver B. Wright, Kazuhiro Kyotani, and Hirotsugu Ogi Phys. Rev. Applied 20, 034048 (2023) – Published 21 September 2023   Generalized Decoy-State Scheme for Rigorous Characterization of Single-Photon Detectors Haibo Wang, Gong Zhang, Jishen Zhang, Chao Wang, Haiwen Xu, Yan Liang, Charles Lim, and Xiao Gong Phys. Rev. Applied 20, 034049 (2023) – Published 21 September 2023   Relaxation Processes in Dipole-Coupled Nitrogen-Vacancy Centers in Zero Field: Application in Magnetometry C. Pellet-Mary, M. Perdriat, P. Huillery, and G. Hétet Phys. Rev. Applied 20, 034050 (2023) – Published 21 September 2023   Effect of Reaction Atmosphere on Catalytic CO Oxidation Over Cu-Based Bimetallic Nanoclusters on a CeO2 Support Long Zhang, Jing Pan, Min Li, Ivo A.W. Filot, Emiel J.M. Hensen, and Hui Wang Phys. Rev. Applied 20, 034051 (2023) – Published 21 September 2023   Resonant and Off-Resonant Magnetoacoustic Waves in Epitaxial Fe3Si/GaAs Hybrid Structures Marc Rovirola, M. Waqas Khaliq, Blai Casals, Michael Foerster, Miguel Angel Niño, Lucía Aballe, Jens Herfort, Joan Manel Hernàndez, Ferran Macià, and Alberto Hernández-Mínguez Phys. Rev. Applied 20, 034052 (2023) – Published 22 September 2023   Enhancement of Proton-Boron Nuclear Reactions by Utilizing a Meshed Catcher Target A.D. Liu, Z.Y. Liu, K. Li, Y.L. Yao, C.T. Zhou, S.P. Zhu, X.T. He, and B. Qiao Phys. Rev. Applied 20, 034053 (2023) – Published 22 September 2023   Wideband Josephson Parametric Isolator M.A. Beck, M. Selvanayagam, A. Carniol, S. Cairns, and C.P. Mancini Phys. Rev. Applied 20, 034054 (2023) – Published 22 September 2023   Carrier Transport in Cubic Boron Nitride: First-Principles and Semiempirical Models M. Zhu, M. Matsubara, and E. Bellotti Phys. Rev. Applied 20, 034055 (2023) – Published 22 September 2023   Superconducting-Semiconducting Voltage-Tunable Qubits in the Third Dimension T.M. Hazard, A.J. Kerman, K. Serniak, and C. Tahan Phys. Rev. Applied 20, 034056 (2023) – Published 25 September 2023   Dispersion Morphing in Stretchable Rotator Lattices Lezheng Fang and Michael J. Leamy Phys. Rev. Applied 20, 034057 (2023) – Published 25 September 2023   Direct Measurement of Photoinduced Transient Conducting State in Multilayer 2H−MoTe2 X.Y. Zhou, H. Wang, Q.M. Liu, S.J. Zhang, S.X. Xu, Q. Wu, R.S. Li, L. Yue, T.C. Hu, J.Y. Yuan, S.S. Han, T. Dong, D. Wu, and N.L. Wang Phys. Rev. Applied 20, 034058 (2023) – Published 25 September 2023   Self-Biased Magnetoelectric Ni/LiNbO3/Ni Trilayers for Body-Embedded Electronic Energy Harvesters Tianwen Huang, Loïc Becerra, Aurélie Gensbittel, Yunlin Zheng, Hakeim Talleb, Ulises Acevedo Salas, Zhuoxiang Ren, and Massimiliano Marangolo Phys. Rev. Applied 20, 034059 (2023) – Published 26 September 2023   Antiferromagnetic Bloch Line Driven by Spin Current as Room-Temperature Analogue of a Fluxon in a Long Josephson Junction R.V. Ovcharov, B.A. Ivanov, J. Åkerman, and R.S. Khymyn Phys. Rev. Applied 20, 034060 (2023) – Published 26 September 2023   Analytic Solutions of Drift-Diffusion Equations and Mobility of Organic Semiconductors Jiu-Xun Sun, Hong-Chun Yang, Yang Li, and Hai-Juan Cui Phys. Rev. Applied 20, 034061 (2023) – Published 26 September 2023   Hybrid Quantum-Classical Heuristic to Solve Large-Scale Integer Linear Programs Marika Svensson, Martin Andersson, Mattias Grönkvist, Pontus Vikstål, Devdatt Dubhashi, Giulia Ferrini, and Göran Johansson Phys. Rev. Applied 20, 034062 (2023) – Published 26 September 2023   Rotation Sensing of a Trapped Nanoparticle Assisted by Magnetic Field Gradient L.-Y. Wang, J.-F. Wei, K.-F. Cui, S.-L. Su, M. Feng, L.-L. Yan, G. Chen, H.-Z. Guo, and C.-X. Shan Phys. Rev. Applied 20, 034063 (2023) – Published 27 September 2023   Inverse Design of Thin-Plate Elastic Wave Devices J.R. Capers Phys. Rev. Applied 20, 034064 (2023) – Published 27 September 2023   Characterizing Crosstalk of Superconducting Transmon Processors Andreas Ketterer and Thomas Wellens Phys. Rev. Applied 20, 034065 (2023) – Published 27 September 2023   Editors' Suggestion Semiconductor-Quantum-Dot Modulator for Cryogenic Operation of Quantum Circuitry M. R. Hogg, M.G. House, P. Pakkiam, and M.Y. Simmons Phys. Rev. Applied 20, 034066 (2023) – Published 27 September 2023 Quantum computing devices have the potential to solve problems that are beyond even the most powerful modern supercomputers. Most quantum hardware operates at temperatures near absolute zero, but controlling a quantum computer at cryogenic temperatures using signals propagating from room temperature becomes infeasible for large-scale processors. The authors explore a device that allows control signals to be generated on-chip at cryogenic temperatures, potentially mitigating this cryogenic bottleneck. Their device is fabricated in silicon using established technologies for quantum processors, providing a pathway towards a hybrid quantum-classical integrated circuit.     Editors' Suggestion Tuning Arrays with Rays: Physics-Informed Tuning of Quantum Dot Charge States Joshua Ziegler, Florian Luthi, Mick Ramsey, Felix Borjans, Guoji Zheng, and Justyna P. Zwolak Phys. Rev. Applied 20, 034067 (2023) – Published 28 September 2023 Many methods to automatically tune silicon spin qubits are limited by reliability and data efficiency, which makes them less likely to be scalable. The authors demonstrate a reliable, efficient, physics-informed tuning algorithm (PIT) for navigating to a target charge configuration⏤a prerequisite to forming qubits. This tuning method combines machine learning and physical intuition with an algorithm that leverages one-dimensional scans (rays) and conventional peak-finding to navigate from a coarse, unknown device state to a desired charge occupation efficiently and effectively. PIT enables the transformation of an uncalibrated circuit to a functioning quantum processor.     Superradiant Scattering by a Limit Cycle Tiemo Pedergnana and Nicolas Noiray Phys. Rev. Applied 20, 034068 (2023) – Published 28 September 2023   Measurement-Device-Independent Quantum Key Distribution with Practical Spontaneous Parametric Down-Conversion Sources Xiao-Hai Zhan, Zhen-Qiu Zhong, Shuang Wang, Zhen-Qiang Yin, Wei Chen, De-Yong He, Guang-Can Guo, and Zheng-Fu Han Phys. Rev. Applied 20, 034069 (2023) – Published 28 September 2023   Field-Free All-Optical Switching and Electrical Readout of Tb/Co-Based Magnetic Tunnel Junctions D. Salomoni, Y. Peng, L. Farcis, S. Auffret, M. Hehn, G. Malinowski, S. Mangin, B. Dieny, L.D. Buda-Prejbeanu, R.C. Sousa, and I.L. Prejbeanu Phys. Rev. Applied 20, 034070 (2023) – Published 28 September 2023   Probing Topological Charge of Discrete Vortices Vasu Dev and Vishwa Pal Phys. Rev. Applied 20, 034071 (2023) – Published 29 September 2023   Native Conditional iswap Operation with Superconducting Artificial Atoms Chang-Kang Hu, Jiahao Yuan, Bruno A. Veloso, Jiawei Qiu, Yuxuan Zhou, Libo Zhang, Ji Chu, Orkesh Nurbolat, Ling Hu, Jian Li, Yuan Xu, Youpeng Zhong, Song Liu, Fei Yan, Dian Tan, R. Bachelard, Alan C. Santos, C.J. Villas-Boas, and Dapeng Yu Phys. Rev. Applied 20, 034072 (2023) – Published 29 September 2023   Sensitivity of an Antineutrino Monitor for Remote Nuclear Reactor Discovery L. Kneale, S.T. Wilson, T. Appleyard, J. Armitage, N. Holland, and M. Malek Phys. Rev. Applied 20, 034073 (2023) – Published 29 September 2023   Ultimate parameters of an all-optical MX resonance in Cs in ultraweak magnetic field M.V. Petrenko, A.S. Pazgalev, and A.K. Vershovskii Phys. Rev. Applied 20, 034074 (2023) – Published 29 September 2023   REVIEW ARTICLES Review Article Ultrafast Devices Based on Surface Plasmons on Bulk Metal and Graphene: Switches, Modulators, and Microscope Electron Sources Jing Zhao, Jianlong Liu, Ruirui Jiang, Kaiqiang Yang, and Baoqing Zeng Phys. Rev. Applied 20, 037001 (2023) – Published 18 September 2023 Technological progress in optical communication and signal-processing systems looks to ultrafast optical switches and modulators, and to ultrafast electron sources for imaging. This review discusses how to use surface plasmons to advance miniaturization and reduce energy consumption. Obstacles here include integrating such devices with conventional techniques, and the diffraction limit preventing the realization of subwavelength scale. In particular, the authors offer insight on the development trends and design of such ultrafast devices, in terms of the various advantages of surface plasmons in different nanostructures and materials.       American Physical Society: 1 Physics Ellipse, College Park, MD 20740 ©2023 American Physical Society | All rights reserved   You are receiving this email because you are subscribed to Table of Content alerts. If you no longer wish to receive these emails, please update your preferences.